PI Webinar - 1250-Volt GaN Switcher ICs Extend GaN Application
미국
Compared to older semiconductor technologies, GaN transistors begin to approach the “ideal switch” that we learned about early in our EE courses at university – an enviably low specific RDS(ON) and extremely low gate and source-drain capacitance. The technology requires no rare materials, and its processing energy budget is far lower than that of SiC, its closest WGB competitor. This being the case, it’s reasonable to state that if an application can be fulfilled using a GaN switch, then the engineer should choose GaN for the application.
So, the question is “when will GaN reach the voltage and current carrying capacity of SiC?” “Now” is the answer when discussing the universal mains voltage level, and this has been the case for some time. Power Integrations now has both 900 V and 1250 V devices, should SiC be worried in regard to higher voltage applications too? This presentation explains the pros and cons of GaN at voltage levels above that needed for residential mains powered equipment and provides some experimental data that attendees should find both informative and intriguing.
Join our webinar to learn more about:
- When to use GaN switches and when to use silicon
- Design benefits of WBG devices
- GaN and Silicon carbide power-switch efficiency comparison
- The path to higher voltage GaN devices
Can’t attend the live event? Register now and receive a link to view the webinar on-demand after the live broadcast.
Speaker:
Silvestro Fimiani
Senior Product Marketing Manager, Power Integrations
Silvestro Fimiani is a senior product marketing manager at Power Integrations. He joined PI in October 2005. Prior to joining PI, he served as the technical director at International Rectifier for high-power products IGBT/Diode/SCR. His earlier experience includes new product development in Ansaldo Semiconductor Italy. He holds a Master’s in Physics from the University of Naples, Italy.
